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| BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor The BUH51 has an application specific state-of-art die designed for use in 50 W Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load. http://onsemi.com * Improved Efficiency Due to the Low Base Drive Requirements: * * High and Flat DC Current Gain hFE Fast Switching Epoxy Meets UL 94, V-0 @ 0.125 in ESD Ratings: Machine Model, C Human Body Model, 3B POWER TRANSISTOR 3.0 AMPERE 800 VOLTS 50 WATTS MAXIMUM RATINGS Rating Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current - Continuous - Peak (Note 1) Base Current - Continuous Base Current - Peak (Note 1) *Total Device Dissipation @ TC = 25_C *Derate above 25C Operating and Storage Temperature Symbol VCEO VCBO VCES VEBO IC ICM IB IBM PD TJ, Tstg Value 500 800 800 10 3.0 8.0 2.0 4.0 50 0.4 - 65 to 150 Unit Vdc Vdc Vdc Vdc Adc Adc Watt W/_C _C 1 BASE 2 COLLECTOR 3 EMITTER YWW BUH51 3 21 TO-225 CASE 77 STYLE 3 MARKING DIAGRAM Y WW = Year = Work Week THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds RJC RJA TL 2.5 100 260 _C/W _C/W _C ORDERING INFORMATION Device BUH51 Package TO-225 Shipping 500 Units/Box Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. (c) Semiconductor Components Industries, LLC, 2004 1 December, 2004 - Rev. 4 Publication Order Number: BUH51/D BUH51 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector-Base Breakdown Voltage (ICBO = 1.0 mA) Emitter-Base Breakdown Voltage (IEBO = 1.0 mA) Collector Cutoff Current (VCE = Rated VCEO, IB = 0 Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Base Current (VCB = Rated VCBO, VEB = 0 Emitter-Cutoff Current (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS Base-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc) DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C VBE(sat) VCE(sat) hFE - - - - 8.0 6.0 5.0 4.0 10 8.0 14 18 0.92 0.8 0.3 0.32 10 8.0 7.5 6.2 14 13 20 25 1.1 - 0.5 0.6 - - - - - - - - Vdc Vdc - - @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C VCEO(sus) VCBO VEBO ICEO ICES ICBO IEBO 500 800 10 - - - - - - 550 950 12.5 - - - - - - - - - 100 100 1000 100 1000 100 Vdc Vdc Vdc mAdc mAdc mAdc mAdc Symbol Min Typ Max Unit DC Current Gain (IC = 0.8 Adc, VCE = 5.0 Vdc) - DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC SATURATION VOLTAGE Dynamic Saturation Voltage: Determined 3 0 ms 3.0 after rising IB1 reaches 90% of final IB1 IC = 1.0 Adc, IB1 = 0.2 Adc VCC = 300 V IC = 2.0 Adc, IB1 = 0.4 Adc VCC = 300 V - @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C VCE(dsat) ( ) - - - - 1.7 6.0 5.1 15 - - - - V V V V DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 Vdc, f = 1.0 MHz) fT Cob Cib - - - 23 34 200 - 100 500 MHz pF pF http://onsemi.com 2 BUH51 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 ms) Turn-on Time Turn-off Time Turn-on Time Turn-off Time IC = 2.0 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc 04 VCC = 300 Vdc IC = 1.0 Adc, IB1 = 0.2 Adc IB2 = 0.2 Adc 02 VCC = 300 Vdc @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C ton toff ton toff - - - - - - - - 110 125 3.5 4.1 700 1250 1.75 2.1 150 - 4.0 - 1000 - 2.0 - ns ms ns ms SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time Storage Time Crossover Time Fall Time Storage Time Crossover Time IC = 2.0 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc IC = 1.0 Adc IB1 = 0.2 Adc IB2 = 0.2 Adc @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C tfi tsi tc tfi tsi tc - - - - - - - - - - - - 200 320 3.4 4.0 350 640 140 300 2.3 2.8 400 725 300 - 3.75 - 500 - 200 - 2.75 - 600 - ns ms ns ns ms ns TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN TJ = 125C TJ = 125C 100 VCE = 3 V 10 TJ = -20C TJ = 25C 10 TJ = -20C TJ = 25C 1 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 1 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 Figure 1. DC Current Gain @ 1.0 V Figure 2. DC Current Gain @ 3.0 V http://onsemi.com 3 BUH51 TYPICAL STATIC CHARACTERISTICS 100 VCE = 5 V hFE , DC CURRENT GAIN VCE , VOLTAGE (VOLTS) 10 IC/IB = 5 TJ = 125C 1 TJ = 25C TJ = -20C 0.1 TJ = 125C 10 TJ = -20C TJ = 25C 1 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 Figure 3. DC Current Gain @ 5.0 V Figure 4. Collector-Emitter Saturation Voltage 10 IC/IB = 10 VCE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 1.5 IC/IB = 5 1 TJ = -20C 1 TJ = -20C TJ = 125C 0.1 0.001 0.1 0.01 1 IC, COLLECTOR CURRENT (AMPS) TJ = 25C 0.5 TJ = 25C TJ = 125C 10 0 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Region 1.5 IC/IB = 10 2 TJ = 25C 4A VCE , VOLTAGE (VOLTS) 1.5 2A 1A 1 3A VBE , VOLTAGE (VOLTS) 1 TJ = -20C TJ = 25C TJ = 125C 0.5 0.5 VCE(sat) (IC = 500 mA) 0.1 1 IB, BASE CURRENT (A) 10 0 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 0 0.01 Figure 7. Base-Emitter Saturation Region Figure 8. Collector Saturation Region http://onsemi.com 4 BUH51 TYPICAL STATIC CHARACTERISTICS 1000 TJ = 25C f(test) = 1 MHz C, CAPACITANCE (pF) BVCER (VOLTS) Cib 1000 TJ = 25C 900 800 700 600 500 400 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 10 100 1000 RBE () 10000 100000 BVCER @ 10 mA BVCER(sus) @ 200 mA, 25 mH 100 Cob 10 Figure 9. Capacitance Figure 10. Resistive Breakdown TYPICAL SWITCHING CHARACTERISTICS 2500 2000 IB1 = IB2 VCC = 300 V PW = 40 s IC/IB = 5 10 8 t, TIME ( s) IB1 = IB2 VCC = 300 V PW = 40 s IC/IB = 5 t, TIME (ns) 1500 6 1000 4 500 0 TJ = 125C TJ = 25C 0 2 1 IC, COLLECTOR CURRENT (AMPS) 3 2 0 TJ = 125C TJ = 25C 0 1 2 IC, COLLECTOR CURRENT (AMPS) 3 Figure 11. Resistive Switching, ton 7 IC/IB = 5 5 t, TIME ( s) IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 4 Figure 12. Resistive Switch Time, toff IC/IB = 10 3 t, TIME ( s) IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 2 3 1 TJ = 125C TJ = 25C 1 0 2 1 IC, COLLECTOR CURRENT (AMPS) 3 TJ = 125C TJ = 25C 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 Figure 13. Inductive Storage Time, tsi Figure 13 Bis. Inductive Storage Time, tsi http://onsemi.com 5 BUH51 TYPICAL SWITCHING CHARACTERISTICS 800 IB1 = IB2 VCC = 15 V VZ = 300 V 600 LC = 200 H t, TIME (ns) 1000 tc IB1 = IB2 VCC = 15 V 800 VZ = 300 V LC = 200 H 600 tc tc 400 fi ttfi t, TIME (ns) 400 tfi 200 TJ = 125C TJ = 25C 0 0.5 1 2 1.5 IC, COLLECTOR CURRENT (AMPS) tfi 2.5 200 0 TJ = 125C TJ = 25C 0.5 1 1.5 2 IC, COLLECTOR CURRENT (AMPS) 2.5 Figure 14. Inductive Storage Time, tc & tfi @ IC/IB = 5 Figure 15. Inductive Storage Time, tc & tfi @ IC/IB = 10 4 450 400 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 H tsi , STORAGE TIME (s) 350 t fi , FALL TIME (ns) 3 IC = 0.8 A 300 250 200 150 100 50 8 10 0 3 2 IC = 2 A TJ = 125C TJ = 25C 1 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H IC = 2 A 4 5 TJ = 125C TJ = 25C IC = 0.8 A 2 4 6 hFE, FORCED GAIN 6 7 hFE, FORCED GAIN 8 9 10 Figure 16. Inductive Storage Time Figure 17. Inductive Fall Time 800 700 t c , CROSSOVER TIME (ns) 600 500 400 300 200 100 3 4 TJ = 125C TJ = 25C IC = 2 A IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H IC = 0.8 A 5 6 7 hFE, FORCED GAIN 8 9 10 Figure 18. Inductive Crossover Time http://onsemi.com 6 BUH51 TYPICAL SWITCHING CHARACTERISTICS VCE dyn 1 s dyn 3 s 0V 10 9 8 7 6 5 4 90% IB 1 s IB 3 s TIME 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 Vclamp IC tsi 10% Vclamp 90% IC tfi 10% IC tc Figure 19. Dynamic Saturation Voltage Measurements Figure 20. Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 150 3W 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3W MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA IB2 Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RB1 Iout VCE IB1 IB IC PEAK 1 F -Voff http://onsemi.com 7 BUH51 TYPICAL THERMAL RESPONSE 1 0.8 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.6 THERMAL DERATING 0.4 0.2 0 20 40 100 80 120 60 TC, CASE TEMPERATURE (C) 140 160 Figure 21. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC -VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21. TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 4 GAIN 4 3 TC 125C LC = 500 H 10 1 ms 1 DC 5 ms 10 s 1 s 2 EXTENDED SOA 0.1 1 0V -5 V -1.5 V 900 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0 200 300 400 500 600 700 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 22. Forward Bias Safe Operating Area Figure 23. Reverse Bias Safe Operating Area http://onsemi.com 8 BUH51 TYPICAL THERMAL RESPONSE 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE P(pk) RJC(t) = r(t) RJC RJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) t2 DUTY CYCLE, D = t1/t2 t1 0.01 0.01 0.1 1 t, TIME (ms) 10 100 1000 Figure 24. Typical Thermal Response (ZJC(t)) for BUH51 http://onsemi.com 9 BUH51 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U Q F M C -A- 123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M DIM A B C D F G H J K M Q R S U V STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 10 BUH51/D |
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